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40V/80A TO-252 N Channel Enhancement Mode Power MOSFET JY4N8M

40V/80A TO-252 N Channel Enhancement Mode Power MOSFET JY4N8M

  • 40V/80A TO-252 N Channel Enhancement Mode Power MOSFET JY4N8M
  • 40V/80A TO-252 N Channel Enhancement Mode Power MOSFET JY4N8M
  • 40V/80A TO-252 N Channel Enhancement Mode Power MOSFET JY4N8M
  • 40V/80A TO-252 N Channel Enhancement Mode Power MOSFET JY4N8M
40V/80A TO-252 N Channel Enhancement Mode Power MOSFET JY4N8M
Product Details:
Place of Origin: China
Brand Name: JEUNKEI
Certification: ISO9001,CE
Model Number: JY4N8M
Payment & Shipping Terms:
Minimum Order Quantity: 50pcs ( sample available)
Price: USD0.5-USD1/PC
Packaging Details: Suite for export
Delivery Time: depend on the order quantity /Negotiable
Payment Terms: T/T, , Western Union, Paypal
Supply Ability: 30000pcs per month
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Detailed Product Description
Name: Power MOSFET Model No.: JY4N8M
Type: N Channel Drain-Source Voltage: 40V
Gate-source Voltage: ±20V Continuous Drain Current: 80A (Tc=25℃)
Pulsed Drain Current: 350A Max Power Dissipation: 80W
Reverse Body Recovery: Yes

General Description:

 

Features:

 

The JY4N8M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on‐resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

 

Applications:

 

● 40V/80A, RDS(ON) ≤6.5mΩ@VGS=10V
● Fast switching and reverse body recovery
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation

 

PIN Description:

 

40V/80A TO-252 N Channel Enhancement Mode Power MOSFET JY4N8M 0

 

Absolute Max Ratings(Tc=25℃ Unless Otherwise Noted)

 

 Symbol Parameter Limit Unit
VDS Drain-Source Voltage 40 V
VGS Gate-Source Voltage ±20 V
ID Continuous Drain Current Tc=25℃ 80 A
Tc=100℃ 55
IDM Pulsed Drain Current 350 A
PD Maximum Power Dissipation 80 W
TJTSTG Operating Junction and Storage Temperature Range -55~+175
RΘJC Thermal Resistance-Junction to Case 1.88 ℃/W
RΘJA Thermal Resistance-Junction to Ambient 92

 

Package Outline:

 

40V/80A TO-252 N Channel Enhancement Mode Power MOSFET JY4N8M 1

Symbol Dimensions in Millimeters Dimensions in inches
Min. Max. Min. Max.
A 2.200 2.400 0.087 0.094
A1 0.000 0.127 0.000 0.005
b 0.660 0.860 0.026 0.034
c 0.460 0.580 0.018 0.023
D 6.500 6.700 0.256 0.264
D1 5.100 5.460 0.201 0.215
D2 0.483TYP. 0.190 TYP.
E 6.000 6.2000 0.236 0.244
e 2.186 2.386 0.086 0.094
L 9.800 10.400 0.386 0.409
L1 2.900 TYP 0.114 TYP.
L2 1.400 1.700 0.055 0.067
L3 1.600 TYP 0.063 TYP.
L4 0.600 1.000 0.024 0.039
ø 1.100 1.300 0.043 0.051
Θ
h 0.000 0.300 0.000 0.012
v 5.350 TYP. 0.211 TYP.


For More products information, please directly contact with us via email: ivanzhu@junqitrading.com

 

Contact Details
Changzhou Junqi International Trade Co.,Ltd

Contact Person: Ivanzhu

Tel: 0086-13961407941

Send your inquiry directly to us
Changzhou Junqi International Trade Co.,Ltd
No.299 Changjiang North Rd, Changzhou City, JIangsu, China
Tel:86-1396-1407941
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