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| Place of Origin: | China |
| Brand Name: | JEUNKEI |
| Certification: | ISO9001,CE |
| Model Number: | JY11M |
| Minimum Order Quantity: | 50pcs ( sample available) |
|---|---|
| Price: | USD0.5-USD1/PC |
| Packaging Details: | Suite for export |
| Delivery Time: | depend on the order quantity /Negotiable |
| Payment Terms: | T/T, , Western Union, Paypal |
| Supply Ability: | 1000pcs per day |
| Name: | N Channel MOSFET | Model No.: | JY11M |
|---|---|---|---|
| Type: | N Channel | Drain-Source Voltage: | 100V (Tc=25℃） |
| Gate-Source Voltage: | ±20V | Continuous Drain Current: | 110A(Tc=25℃） |
| Max Power Dissipation: | 210W | Operating Junction And Storage Temperature Range: | -55~+175℃ |
| Reverse Body Recovery: | Yes | ||
| Highlight: | enhancement mode power mosfet N Channel,enhancement mode power mosfet JY11M,Hard Switched enhancement mode power mosfet |
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General Description:
The JY11M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These
features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Features:
● 100V/110A, RDS(ON) =6.5mΩ@VGS=10V
● Fast switching and reverse body recovery
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Applications:
● Switching application
● Hard switched and high frequency circuits
● Power Management for Inverter Systems
PIN Description:
Absolute Maximum Ratings( Tc=25℃ Unless Otherwise Noted):
| Symbol | Parameter | Limit | Unit | |
| VDS | Drain-Source Voltage | 100 | V | |
| VGS | Gate-Source Voltage | ±20 | V | |
| ID | Continuous Drain Current | TC=25℃ | 110 | A |
| TC=100℃ | 82 | |||
| IDM | Pulsed Drain Current | 395 | A | |
| PD | Maximum Power Dissipation | 210 | W | |
| TJTSTG | Operating Junction and Storage Temperature Range | -55~+175 | ℃ | |
| RΘJC | Thermal Resistance-Junction to Case | 0.65 | ℃/W | |
|
RθJA
|
Thermal Resistance-Junction to Ambient | 62 | ||
TO220-3 Package Outline:
| Symbol | mm | inch | Symbol | mm | inch | ||||||||
| Min | Nom | Max | Min | Nom | Max | Min | Nom | Max | Min | Nom | Max | ||
| A | 4.40 | 4.57 | 4.70 | 0.173 | 0.180 | 0.185 | Øp1 | 1.40 | 1.50 | 1.60 | 0.055 | 0.059 | 0.063 |
| A1 | 1.27 | 1.30 | 1.33 | 0.050 | 0.051 | 0.052 | e | 2.54BSC | 0.1BSC | ||||
| A2 | 2.35 | 2.40 | 2.50 | 0.093 | 0.094 | 0.098 | e1 | 5.08BSC | 0.2BSC | ||||
| b | 0.77 | - | 0.90 | 0.030 | - | 0.035 | H1 | 6.40 | 6.50 | 6.60 | 0.252 | 0.256 | 0.260 |
| b2 | 1.23 | - | 1.36 | 0.048 | - | 0.054 | L | 12.75 | - | 13.17 | 0.502 | - | 0.519 |
| C | 0.48 | 0.50 | 0.52 | 0.019 | 0.020 | 0.021 | L1 | - | - | 3.95 | - | - | 0.156 |
| D | 15.40 | 15.60 | 15.80 | 0.606 | 0.614 | 0.622 | L2 | 2.50REF. | 0.098REF. | ||||
| D1 | 9.00 | 9.10 | 9.20 | 0.354 | 0.358 | 0.362 | Øp | 3.57 | 3.60 | 3.63 | 0.141 | 0.142 | 0.143 |
| DEP | 0.05 | 0.10 | 0.20 | 0.002 | 0.004 | 0.008 | Q | 2.73 | 2.80 | 2.87 | 0.107 | 0.110 | 0.113 |
| E | 9.70 | 9.90 | 10.10 | 0.382 | 0.389 | 0.398 | Θ1 | 5° | 7° | 9° | 5° | 7° | 9° |
| E1 | - | 8.7 | - | - | 0.343 | - | Θ2 | 1° | 3° | 5° | 1° | 3° | 5° |
| E2 | 9.80 | 10.00 | 10.20 | 0.386 | 0.94 | 0.401 | |||||||
For more information, please directly contact with us via email: ivanzhu@junqitradinig.com
Contact Person: Ivanzhu
Tel: 0086-13961407941
