JY16M N Channel Enhancement Mode Power MOSFET For Power Switching Application

Name: JY16M N Channel Enhancement Mode Power MOSFET For Power Switching Application
Brand: JUYI
SKU: JY16M
Price: 0.5 USD
Availability: InStock
Rating: 4.9 (121 reviews)

Product Details:

Place of Origin:	China
Brand Name:	JUYI
Certification:	ISO9001,CE
Model Number:	JY16M

Payment & Shipping Terms:

Minimum Order Quantity:	50pcs ( sample available)
Price:	USD0.5-USD1/PC
Packaging Details:	Suite for export
Delivery Time:	depend on the order quantity /Negotiable
Payment Terms:	T/T, , Western Union, Paypal
Supply Ability:	10000pcs per month

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Detailed Product Description

Name:	Power MOSFET	Model No.:	JY16M
Type:	N Channel	Drain-Source Voltage:	600V
Gate-Source Voltage:	±30V	Continuous Drain Current:	4A (Ta=25℃）
Pulsed Drain Current:	16A	Maximum Power Dissispation:	33W
Color:	Black	Shap:	Square
High Light:	1148545610 Auto Power Window Switch , 1248204610KZ , 1248204610KZ Auto Power Window Switch

General Description:

The JY16M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

Features:

● 600V/4A, RDS(ON) =2.6Ω@VGS=10V
● Fast switching and reverse body recovery
● Excellent package for good heat dissipation

Application:

● Lighting
● High efficiency switch mode power suplies

PIN Description:

JY16M N Channel Enhancement Mode Power MOSFET For Power Switching Application 0

Absolute Maximum Ratings(Ta=25℃ Unless Otherwise Noted):

Symbol	Parameter		Rating	Unit
VDS	Drain-Source Voltage		600	V
VGS	Gate-Source Voltage		±30	V
ID	Continuous Drain Current	Tc=25℃	4	A
ID	Continuous Drain Current	Tc=100℃	2.9	A
IDM	Pulsed Drain Current		16	A
PD	Maximum Power Dissipation		33	W
TJTSTG	Operating Junction and Storage Temperature Range		-55~+150	℃
RΘJC	Thermal Resistance-Junction to Case		1.56	℃/W
RΘJA	Thermal Resistance-Junction to Ambient		62	℃/W

TO220F-3 Package Outline:

SYMBOL	MM			INCH			SYMBOL	MM			INCH
SYMBOL	MIN	NOM	MAX	MIN	NOM	MAX	SYMBOL	MIN	NOM	MAX	MIN	NOM	MAX
A	4.40	4.57	4.70	0.173	0.180	0.185	Øp1	1.40	1.50	1.60	0.055	0.059	0.063
A1	1.27	1.30	1.33	0.050	0.051	0.052	e	2.54BSC			0.1BSC
A2	2.35	2.40	2.50	0.093	0.094	0.098	e1	5.08BSC			0.2BSC
b	0.77	-	0.90	0.030	-	0.035	H1	6.40	6.50	6.60	0.252	0.256	0.260
b2	1.23	-	1.36	0.048	-	0.054	L	12.75	-	13.17	0.502	-	0.519
C	0.48	0.50	0.52	0.019	0.020	0.021	L1	-	-	3.95	-	-	0.156
D	15.40	15.60	15.80	0.606	0.614	0.622	L2	250REF.			0.098REF.
D1	9.00	9.10	9.20	0.354	0.358	0.362	Øp	3.57	3.60	3.63	0.141	0.142	0.143
DEP	0.05	0.10	0.20	0.002	0.004	0.008	Q	2.73	2.80	2.87	0.107	0.110	0.113
E	9.70	9.90	10.10	0.382	0.389	0.398	Θ1	5°	7°	9°	5°	7°	9°
E1	-	8.70	-	-	0.343	-	Θ2	1°	3°	5°	1°	3°	5°
E2	9.80	10.00	10.20	0.386	0.394	0.401